Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

Journal Article (2016)
Author(s)

N Golshani (TU Delft - Electronic Components, Technology and Materials)

J Derakhshandeh Kheljani (TU Delft - Electronic Components, Technology and Materials)

C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)

Ryoichi Ishihara (TU Delft - Electronic Components, Technology and Materials)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1016/j.sse.2016.01.011
More Info
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Publication Year
2016
Language
English
Related content
Research Group
Electronic Components, Technology and Materials
Volume number
119
Pages (from-to)
50-50

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