Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"
Journal Article
(2016)
Author(s)
N. Golshani (TU Delft - Electronic Components, Technology and Materials)
J. Derakhshandeh (TU Delft - Electronic Components, Technology and Materials)
C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)
R. Ishihara (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1016/j.sse.2016.01.011
To reference this document use:
https://resolver.tudelft.nl/uuid:8680c7f4-97c9-4b66-b2db-e2296b677f9b
More Info
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Publication Year
2016
Language
English
Related content
Research Group
Electronic Components, Technology and Materials
Volume number
119
Pages (from-to)
50-50
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