Temperature-Dependent Interplay between Structural and Charge Carrier Dynamics in CsMAFA-Based Perovskites

Journal Article (2023)
Author(s)

J. Zhao (TU Delft - ChemE/Opto-electronic Materials)

X. Liu (TU Delft - ChemE/O&O groep)

Zijin Wu (Eindhoven University of Technology)

Bahiya Ibrahim (TU Delft - ChemE/O&O groep)

Jos Thieme (TU Delft - ChemE/O&O groep)

Geert Brocks (University of Twente, Eindhoven University of Technology)

Shuxia Tao (Eindhoven University of Technology)

Lars Bannenberg (TU Delft - RID/TS/Instrumenten groep)

T.J. Savenije (TU Delft - ChemE/Opto-electronic Materials)

Research Group
ChemE/Opto-electronic Materials
Copyright
© 2023 J. Zhao, X. Liu, Zijin Wu, B. Ibrahim, J. Thieme, Geert Brocks, Shuxia Tao, L.J. Bannenberg, T.J. Savenije
DOI related publication
https://doi.org/10.1002/adfm.202311727
More Info
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Publication Year
2023
Language
English
Copyright
© 2023 J. Zhao, X. Liu, Zijin Wu, B. Ibrahim, J. Thieme, Geert Brocks, Shuxia Tao, L.J. Bannenberg, T.J. Savenije
Research Group
ChemE/Opto-electronic Materials
Issue number
13
Volume number
34
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Abstract

State-of-the-art triple cation, mixed halide perovskites are extensively studied in perovskite solar cells, showing very promising performance and stability. However, an in-depth fundamental understanding of how the phase behavior in Cs0.05FA0.85MA0.10Pb(I0.97Br0.03)3 (CsMAFA) affects the optoelectronic properties is still lacking. The refined unit cell parameters a and c in combination with the thermal expansion coefficients derived from X-ray diffraction patterns reveal that CsMAFA undergoes an α–β phase transition at ≈280 K and another transition to the γ-phase at ≈180 K. From the analyses of the electrodeless microwave photoconductivity measurements it is shown that shallow traps only in the γ-phase negatively affect the charge carrier dynamics. Most importantly, CsMAFA exhibits the lowest amount of microstrain in the β-phase at around 240 K, corresponding to the lowest amount of trap density, which translates into the longest charge carrier diffusion length for electrons and holes. Below 200 K a considerable increase in deep trap states is found most likely related to the temperature-induced compressive microstrain leading to a huge imbalance in charge carrier diffusion lengths between electrons and holes. This work provides valuable insight into how temperature-dependent changes in structure affect the charge carrier dynamics in FA-rich perovskites.