A 28 nm 2 GS/s 5-b single-channel SAR ADC with gm-boosted StrongARM comparator

Conference Paper (2017)
Author(s)

Pierluigi Cenci (TU Delft - Electronic Instrumentation)

M. Bolatkale (NXP Semiconductors, TU Delft - Electronic Instrumentation)

Robert Rutten (NXP Semiconductors)

Gerard Lassche (Catena)

K.A.A. Makinwa (TU Delft - Microelectronics)

L Breems (NXP Semiconductors, Eindhoven University of Technology)

Research Group
Electronic Instrumentation
DOI related publication
https://doi.org/10.1109/ESSCIRC.2017.8094553
More Info
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Publication Year
2017
Language
English
Research Group
Electronic Instrumentation
Pages (from-to)
171-174
ISBN (electronic)
978-1-5090-5025-3

Abstract

This paper presents a 2 GS/s 5-b single-channel SAR ADC in 28 nm CMOS. The ADC uses a gm-boosted StrongARM comparator to achieve the highest reported sampling frequency for a non-time-interleaved SAR ADC. Its high sampling frequency, large input signal capability and one clock cycle latency make the ADC suitable for time-interleaved, multi-stage and feedback ADC architectures. The ADC occupies 900 μm2 and consumes 1.25 mW from a 0.9 V supply. Without calibration, and when operated at 1.5 GS/s it achieves 30.3 dB SNDR (FOMw=31.2 fJ/conv.-step). This drops slightly, to 27.4dB, at the maximum sampling rate of 2 GS/s.

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