Electronic properties of InAs/EuS/Al hybrid nanowires

Journal Article (2021)
Author(s)

Chun Xiao Liu (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - ChemE/Delft Ingenious Design)

Sergej Schuwalow (University of Copenhagen)

Yu Liu (University of Copenhagen)

Kostas Vilkelis (TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Wimmer Group, Kavli institute of nanoscience Delft)

A. L.R. Manesco (Universidade de São Paulo, Kavli institute of nanoscience Delft)

P. Krogstrup (University of Copenhagen)

Michael Wimmer (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QN/Wimmer Group)

DOI related publication
https://doi.org/10.1103/PhysRevB.104.014516 Final published version
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Publication Year
2021
Language
English
Issue number
1
Volume number
104
Article number
014516
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Abstract

We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment, combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations.

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