Control of arsenic doping during low temperature CVD epitaxy of Silicon (100)
Journal Article
(2000)
Author(s)
WD van Noort (TU Delft - Electronic Components, Technology and Materials)
L.K. Nanver (TU Delft - Electronic Components, Technology and Materials)
JW Slotboom (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://resolver.tudelft.nl/uuid:952a2c01-36f4-4997-99ae-466c9fe9d621
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Publication Year
2000
Research Group
Electronic Components, Technology and Materials
Issue number
11
Volume number
147
Pages (from-to)
4301-4304
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