20 records found
1
Front-to back-side overlay optimization after wafer bonding for 3D integration
CV-doping profiling of shallow junctions with an abrupt and highly doped arsenic buried epilayer
CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer
Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector
Reduction of UHF power transistor distortion with a nonuniform collector doping profile
Bipolar transistors with an arsenic spike epi layer: technology and characterization
Reduction of UHF power transistor distortion with a non-uniform collector doping profile
Bipolar transistor epilayer design using the MAIDS mixed-level simulator
Reduction of distortion with a non-uniform BJT collector doping profile
Elimination of TED and base leakage in collector-up SIGE HBT's
Control of arsenic doping during low temperature CVD epitaxy of Silicon (100)
Progress of BLW-898 project. Progress of Si/As epitaxy: milestone report Jun. 2000
Metal/silicon Schottky barrier lowering by RTCVD interface passivation
As peaks in Si (100) films fabricated with rapid thermal epitaxy
Epitaxial arsenic doping of Si BJT collectors
CATV modules, BLW 898, and As doped epi-layers
Bipolar transistor epilayer design using the MAIDS mixed level simulator
BLW 898 class A to A/B modelling with MAIDS and MEXTRAM
BLW 898, alternative collector profiles
Optimisation of the base-collector doping profile for high-frequency distortion