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Metal/silicon Schottky barrier lowering by RTCVD interface passivation

Conference paper - Q Ren, WD van Noort, L.K. Nanver, JW Slotboom

As peaks in Si (100) films fabricated with rapid thermal epitaxy

Conference paper - WD van Noort, L.K. Nanver, C.C.G. Visser, A. van den Bogaard, JW Slotboom

Elimination of TED and base leakage in collector-up SIGE HBT's

Conference paper - LCM van Oever, L.K. Nanver, T.L.M. Scholtes, H.W. van Zeijl, WD van Noort, Q Ren, JW Slotboom

CV-doping profiling of shallow junctions with an abrupt and highly doped arsenic buried epilayer

Conference paper - C Ortiz, L.K. Nanver, WD van Noort, T.L.M. Scholtes, JW Slotboom

Epitaxial arsenic doping of Si BJT collectors

Conference paper - WD van Noort, L.K. Nanver, JW Slotboom

Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector

Journal article - LCM van Oever, L.K. Nanver, T.L.M. Scholtes, H.W. van Zeijl, WD van Noort, Q Ren, JW Slotboom

Reduction of UHF power transistor distortion with a nonuniform collector doping profile

Journal article - WD van Noort, L.C.N. de Vreede, HFF Jos, L.K. Nanver, JW Slotboom

Control of arsenic doping during low temperature CVD epitaxy of Silicon (100)

Journal article - WD van Noort, L.K. Nanver, JW Slotboom

Bipolar transistors with an arsenic spike epi layer: technology and characterization

Doctoral thesis - WD van Noort

Bipolar transistor epilayer design using the MAIDS mixed-level simulator

Journal article - L.C.N. de Vreede, HC de Graaff, JL Tauritz, JA Willemen, WD van Noort, HFF Jos, LE Larson, JW Slotboom

Reduction of distortion with a non-uniform BJT collector doping profile

Conference paper - WD van Noort, L.C.N. de Vreede, HFF Jos, L.K. Nanver, JW Slotboom

Reduction of UHF power transistor distortion with a non-uniform collector doping profile

Conference paper - WD van Noort, HFF Jos, L.C.N. de Vreede, L.K. Nanver, JW Slotboom

Bipolar transistor epilayer design using the MAIDS mixed level simulator

Report - L.C.N. de Vreede, HC de Graaff, JA Willemen, WD van Noort, HFF Jos, LE Larson, JW Slotboom, JL Tauritz

Progress of BLW-898 project. Progress of Si/As epitaxy: milestone report Jun. 2000

Report - WD van Noort

Optimisation of the base-collector doping profile for high-frequency distortion

Conference paper - WD van Noort, L.C.N. de Vreede, L.K. Nanver, HC de Graaff, JW Slotboom

Front-to back-side overlay optimization after wafer bonding for 3D integration

Conference paper - WD van Noort, L Marinier, R Pellens, B Sutedja, R. Dekker, H.W. van Zeijl

CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer