Front-to back-side overlay optimization after wafer bonding for 3D integration

CV-doping profiling of shallow junctions with an abrupt and highly doped arsenic buried epilayer

CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer

Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector

Reduction of UHF power transistor distortion with a nonuniform collector doping profile

Bipolar transistors with an arsenic spike epi layer: technology and characterization

Elimination of TED and base leakage in collector-up SIGE HBT's

Control of arsenic doping during low temperature CVD epitaxy of Silicon (100)

Metal/silicon Schottky barrier lowering by RTCVD interface passivation

Bipolar transistor epilayer design using the MAIDS mixed-level simulator

Reduction of distortion with a non-uniform BJT collector doping profile

Progress of BLW-898 project. Progress of Si/As epitaxy: milestone report Jun. 2000

Reduction of UHF power transistor distortion with a non-uniform collector doping profile

Epitaxial arsenic doping of Si BJT collectors

CATV modules, BLW 898, and As doped epi-layers

BLW 898, alternative collector profiles

BLW 898 class A to A/B modelling with MAIDS and MEXTRAM

Bipolar transistor epilayer design using the MAIDS mixed level simulator

As peaks in Si (100) films fabricated with rapid thermal epitaxy

Optimisation of the base-collector doping profile for high-frequency distortion