Front-to back-side overlay optimization after wafer bonding for 3D integration

CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer

CV-doping profiling of shallow junctions with an abrupt and highly doped arsenic buried epilayer

Reduction of UHF power transistor distortion with a nonuniform collector doping profile

Bipolar transistors with an arsenic spike epi layer: technology and characterization

Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector

Control of arsenic doping during low temperature CVD epitaxy of Silicon (100)

Elimination of TED and base leakage in collector-up SIGE HBT's

Reduction of distortion with a non-uniform BJT collector doping profile

Reduction of UHF power transistor distortion with a non-uniform collector doping profile

Metal/silicon Schottky barrier lowering by RTCVD interface passivation

Progress of BLW-898 project. Progress of Si/As epitaxy: milestone report Jun. 2000

Bipolar transistor epilayer design using the MAIDS mixed-level simulator

BLW 898, alternative collector profiles

Bipolar transistor epilayer design using the MAIDS mixed level simulator

Epitaxial arsenic doping of Si BJT collectors

As peaks in Si (100) films fabricated with rapid thermal epitaxy

BLW 898 class A to A/B modelling with MAIDS and MEXTRAM

CATV modules, BLW 898, and As doped epi-layers

Optimisation of the base-collector doping profile for high-frequency distortion