A high responsivity and controllable recovery ultraviolet detector based on a WO3gate AlGaN/GaN heterostructure with an integrated micro-heater
Jianwen Sun (TU Delft - Electronic Components, Technology and Materials)
Shuo Zhang (Chinese Academy of Sciences)
Teng Zhan (Chinese Academy of Sciences)
Zewen Liu (Tsinghua University)
Junxi Wang (Chinese Academy of Sciences)
Xiaoyan Yi (Chinese Academy of Sciences)
Jinmin Li (Chinese Academy of Sciences)
Pasqualina M. Sarro (TU Delft - Electronic Components, Technology and Materials)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials, Shenzhen Institute of Wide-bandgap Semiconductors)
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Abstract
A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO3nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was integrated for chip level heating and cooling. Our device when exposed to UV wavelength exhibits a high responsivity of 1.67 × 104A W−1at 240 nm and a sharp cut-off wavelength of 275 nm. More importantly, the persistent photoconductivity (PPC) effect can be eliminated by a novel method, mono-pulse heating reset (MHR), which consists in applying an appropriate pulse voltage to the micro-heater right after the removal of the UV illumination. The recovery time was reduced from hours to just seconds without reducing the high responsivity and stability of the photodetector. The UV detection, high responsivity, high stability, controllable recovery process and low production cost of GaN-based photodetectors make these devices extremely attractive for several applications, such as fire detection and missile and rocket warning.