A high responsivity and controllable recovery ultraviolet detector based on a WO3gate AlGaN/GaN heterostructure with an integrated micro-heater

Journal article (2020)

Authors

J. Sun Electronic Components, Technology and Materials - EEMCS
Shuo Zhang Chinese Academy of Sciences, University of Chinese Academy of Sciences
Teng Zhan University of Chinese Academy of Sciences, Chinese Academy of Sciences
Zewen Liu Tsinghua University
Junxi Wang University of Chinese Academy of Sciences, Chinese Academy of Sciences
Xiaoyan Yi University of Chinese Academy of Sciences, Chinese Academy of Sciences
Jinmin Li Chinese Academy of Sciences, University of Chinese Academy of Sciences
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Shenzhen Institute of Wide-bandgap Semiconductors, Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2020 J. Sun, Shuo Zhang, Teng Zhan, Zewen Liu, Junxi Wang, Xiaoyan Yi, Jinmin Li, Pasqualina M Sarro, Kouchi Zhang
DOI: https://doi.org/10.1039/d0tc00553c
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Published Date

2020

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO3nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was integrated for chip level heating and cooling. Our device when exposed to UV wavelength exhibits a high responsivity of 1.67 × 104A W−1at 240 nm and a sharp cut-off wavelength of 275 nm. More importantly, the persistent photoconductivity (PPC) effect can be eliminated by a novel method, mono-pulse heating reset (MHR), which consists in applying an appropriate pulse voltage to the micro-heater right after the removal of the UV illumination. The recovery time was reduced from hours to just seconds without reducing the high responsivity and stability of the photodetector. The UV detection, high responsivity, high stability, controllable recovery process and low production cost of GaN-based photodetectors make these devices extremely attractive for several applications, such as fire detection and missile and rocket warning.

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