Enhancing the Photovoltaic Efficiency of In0.2Ga0.8N/GaN Quantum Well Intermediate Band Solar Cells Using Combined Electric and Magnetic Fields
Hassan Abboudi (University Sidi Mohammed Ben Abdellah)
Redouane En-nadir (University Sidi Mohammed Ben Abdellah)
Mohamed A. Basyooni-M.Kabatas (TU Delft - Dynamics of Micro and Nano Systems)
Ayoub El Baraka (University Sidi Mohammed Ben Abdellah)
Walid Belaid (University of Leeds)
Ilyass Ez-zejjari (Hassan II University of Casablanca)
Haddou El Ghazi (Hassan II University of Casablanca, University Sidi Mohammed Ben Abdellah)
Anouar Jorio (University Sidi Mohammed Ben Abdellah)
Izeddine Zorkani (University Sidi Mohammed Ben Abdellah)
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Abstract
This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.
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