In the present work, an essential advance in the preparation of novel nanocomposites based on functionalized V₂O₅ nanostructures with reduced graphene oxide by hydrothermal method, which has great potential for use in photocatalytic processes related to environmental remediation. XRD analysis confirmed V₂O₅ in an orthorhombic structure. SEM images showed transparent RGO layers well anchored onto the surface of the V₂O₅ with a homogeneous distribution. Raman spectroscopy further explained the hybridization and interaction between the components. The photocatalytic activity of Rhodamine-B in aqueous solutions has been studied upon irradiation with visible light. A high RhB degradation was obtained using the V₂O₅/RGO photocatalyst (82 %), compared to the degradation obtained with only V₂O₅ (60 %). First-principles Density Functional Theory (DFT) simulations reveal a strong interaction between V₂O₅ molecules and graphene surfaces, with an adsorption energy of −1.673 eV and a significant charge transfer of 0.367 e− to RGO. This interaction modifies the electronic structure, creating semi-metallic behavior near the Fermi level and enhancing catalytic activity through improved charge carrier dynamics and active sites for photocatalytic applications.

This study reports the synthesis of a nanohybrid material composed of poly(2-methylaniline) (P(2MA)) and iron oxide (Fe2O3) as electrodes for supercapacitors using a simple and cost-effective method. Various characterization techniques were employed to analyze the samples. The results revealed that the Fe2O3/P(2MA) nanohybrid exhibits nanofiber structures, while pure P(2MA) displays a porous hollow sphere morphology. Furthermore, the analysis confirmed the effective dispersion of Fe2O3 nanoparticles within the polymer matrix. The electrochemical properties of the Fe2O3/P(2MA) nanohybrid were found to surpass those of pure P(2MA) in both NaCl and HCl electrolytes. Notably, the nanohybrid demonstrated longer discharge times and higher oxidation/reduction currents in HCl than NaCl. The gravimetric and areal capacitances were measured at 998.4 F g−1 and 1497.6 mF cm−2 in 0.5 M HCl at a current density of 0.6 A g−1. Furthermore, the nanohybrid retained 99.9% of its initial specific capacitance after 2,000 cycles. These findings underscore the significant potential of the Fe2O3/P(2MA) nanohybrid as a high-performance supercapacitor electrode for energy storage applications.

In this study, we developed a ternary nanocomposite using graphene oxide (GO), multiwalled carbon nanotubes (MWCNTs), and tungsten trioxide (WO₃), nanostructures, synthesized via a straightforward chemical process with ultrasound assistance. The initial composition was GO/MWCNT, later combined with WO₃ to form the GO/MWCNT: WO₃ (25/25:50) structure. Characterization was performed using X-ray diffraction, which revealed the multiphase nature of the WO₃ nanostructures. Scanning Electron Microscopy showed the one-dimensional CNTs interwoven with graphene oxide sheets decorated with densely populated WO₃ nanopetals. Fourier transform infrared and Raman spectroscopy confirmed the chemical composition of the system. The photocatalytic degradation of Rhodamine-B in water under visible light irradiation was significantly enhanced using the GO/MWCNT: WO₃ nanocomposite, achieving an 85 % degradation rate compared to only 10 % by GO alone, highlighting its potential for environmental remediation.

The novel design of gold/polypyrrole-multi-walled carbon nanotubes/titanium dioxide/aluminum oxide/P-type silicon/aluminum (Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al) is utilized to fabricate supercapacitors, sensors, diodes, and microelectronic devices. The electrical characteristics of the structure are examined both in the dark and under illumination to evaluate its photosensing performance. The real part of the AC conductivity at all voltages and temperatures is observed to be low at low- and mid-frequencies but significantly increases at high frequencies. The imaginary part of the AC conductivity exhibits three distinct behaviors: it is positive at low frequencies and shows both negative and positive values at high frequencies. At specific temperatures, such as 293, 273, and 253 K, the imaginary component of the AC conductivity (σ ac) is negative only at high frequencies. In the Cole-Cole diagrams, the symmetrical semicircles increase with temperature for all voltages, except at V = -2 V. The real part of the electric modulus (M′) shows positive and negative values; however, at certain temperatures, it is positive. The imaginary part of the modulus (M″) is consistently positive.

The effect of the Gd/Sn composition ratio of Cu₂Sn_1-xGd_xS₃ is examined. The films are fabricated on glass substrates in a sulfur atmosphere via the spin coating. The influence of the Gd/Sn composition ratio on the structural, morphological, optical, and electrical properties of the films is investigated using X-ray diffraction, FESEM, UV-Vis, and Hall effect. XRD patterns for the films revealed that all films have a monoclinic polycrystalline. The morphological and optical properties of the films show the formation of spherical grains and polygonal structures with an energy band in the range of 2.10–1.50 eV. The electrical properties of the films are changed by increasing the Gd/Sn composition ratio in the film. Furthermore, the Cu₂Sn_1-xGd_xS₃/CdS heterojunction solar cell was modeled by SCAPS-1D. The optimized conditions yielded exceptional photovoltaic parameters, achieving an open-circuit voltage of 0.7885 V, short circuit current density of 41.09 mA/cm², fill factor of 85.30%, and an efficiency of 27.3%.

This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.

Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confinement potentials. The primary focus of this inquiry centers on the analysis of binding energy, electron probability distribution, and diamagnetic susceptibility in connection with both the ground (1s) and excited (2p) electron states. Utilizing advanced computational techniques, specifically the Finite Elements Method (FEM) implemented through Python code, this study unveils a marked alteration in the interaction between electrons and impurities when exposed to external fields. Significantly, the characteristics of the confinement potential exert a substantial influence on the explored physical parameters. This research significantly advances our understanding of the interaction between impurities and intense fields, offering valuable insights into solid-state phenomena within low-dimensional systems. Consequently, it contributes to the design and fabrication of next-generation applications in the field of quantum well systems, encompassing areas such as lighting, detection, information processing, sensing, and energy conversion.

Desert environments are prime locations for concentrated solar power (CSP) applications due to abundant direct normal irradiance. Despite this advantage, the accumulation and adhesion of dust on CSP mirror surfaces present significant challenges to plant efficiency. This paper comprehensively explores soiling phenomena and dust adhesion mechanisms, complemented by advanced measurement techniques tailored for CSP reflector mirrors. By elucidating the factors influencing dust accumulation and delving into the thermodynamics of self-cleaning coatings, alongside an analysis of various mirror materials, this study aims to enrich our understanding of soiling in CSP systems. This study aims to provide valuable insights that will help develop strategies to reduce dust-related efficiency losses in CSP plants, ultimately supporting the development of more reliable and sustainable solar energy solutions for the MENA region.

Tandem solar cells have a wider photon absorption range, allowing them to provide better efficiency than single-junction SC. The upper cell absorbs high-energy photons, while the lower cell absorbs low-energy filtered photons. However, in order to obtain affordable, efficient, and long-lasting SC, the absorber layers of the top and bottom cells must be integrated with an adequate bandgap. This research suggests tandem perovskite solar cells as upper band active materials in this setting. The Si homojunction solar cell's performance was improved by investigating the thicknesses of the p−type and n−type layers, doping concentrations, and defect densities. The thickness variation of the perovskite solar cell (100−400nm) is then optimized. To precisely replicate the tandem devices, the estimated spectra of the perovskite SC are optically filtered onto the lower cells. Current matching was achieved by adjusting the thickness of the perovskite sub-cell with different bottom layer thicknesses, and the optimized efficiency of 36.26% for the perovskite/Si tandem device was shown. The discoveries will open the door for the upcoming creation of high−efficiency, low-energy solar cells.

This study pioneers the use of CuInGaSe2, a quaternary alloy, in Schottky barrier diodes, beyond its traditional application in solar cells, highlighting its potential in sustainable energy technologies such as supercapacitors. We delve into its unique electrical and dielectric characteristics by introducing CuInGaSe2 into the Schottky barrier diode device, synthesized via an innovative liquid phase epitaxy on silicon substrates. Our investigation into the structural, electrical, and dielectric properties reveals the alloy's exceptional capacitance behavior, which transitions from positive to negative with varying frequency. It takes negative values at a frequency of 12 900 Hz and a temperature of 300 K. In comparison, at a frequency of 1216 Hz, all curves take negative and positive values, demonstrating significant promise for enhancing the efficiency and sustainability of energy storage solutions. These findings contribute to the advancement of supercapacitor production and underscore the broader applicability of CuInGaSe2 in promoting sustainable energy technologies.

UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films’ structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).

This study introduces the development of novel, flexible gas sensors operating at room temperature (RT), utilizing a graphene oxide (GO) via the modified Hummers' method and bacterial nanocellulose (BNC) composite to enhance gas detection in industrial and environmental settings. The composite materials, denoted as GO@BNC, were synthesized with varying GO concentrations ranging from 2 % to 30 %, aiming to investigate their responsiveness to gases such as carbon dioxide (CO₂), oxygen (O₂), acetone (Ac), and ethanol (Eth). The prepared nanomaterials were characterized using FT-IR, Raman, TGA, SEM, and AFM techniques. The bandgap of Go ranges from 4.19, 3.47, 3.16, 2.79, and 2.48 eV for 2, 5, 10, 20, and 30 % GO concentrations, respectively. Notably, the sensor containing wt % of 20 % GO concentration exhibited remarkable sensitivity to Ac, achieving a 270 % increase in resistance at a concentration of 250 μL/L. Conversely, the sensor with a wt % of 30 % GO composition showed superior sensitivity to Eth, with a 420 % signal enhancement under similar conditions. Further modification of GO@BNC through mild reduction resulted in the formation of reduced graphene oxide (rGO@BNC) composites intended to assess the functional groups' impact on sensing performance. Our findings underscore the potential of GO@BNC composites as sustainable and efficient materials for fabricating eco-friendly flexible gas sensors and devices for detecting organic compounds.

In this study, we investigated the influence of structural parameters, including active region dimensions, electric field intensity, In-composition, impurity position, and potential profiles, on the energy levels, sub-gap transitions, and photovoltaic characteristics of a p-GaN/i-(In, Ga)N/GaN-n (p-QW-n) structure. The finite element method (FEM) has been used to solve numerically the Schrödinger equation. We found that particle and sub-gap energy levels are susceptible to well width, electric field, and impurity position. Particle energy decreases with increasing well size and electric field intensity, while impurity position affects energy based on proximity to the well center. Potential profile shapes, such as rectangular (RQW) and parabolic (PQW), also play a significant role, with PQW profiles providing stronger particle confinement. IB width increases with electric field intensity and saturates at higher In-content. Voc increases with field strength but decreases with In-content, and the parabolic profile yields higher efficiency than the rectangular one. Photovoltaic efficiency is improved with an appropriately oriented electric field and decreases with higher In-content and field intensity. These findings highlight the critical role of structural parameters in optimizing QW-IBSC performance.

In this groundbreaking study, we unveil the remarkable structural, electronic, and optical Properties of the newly discovered double perovskite material, K₂AgBiI₆, presenting a paradigm shift in materials science. The unique crystal structure and diverse atomic interactions inherent in this double perovskite make it an up-and-coming candidate for various technological applications, particularly in photovoltaics; owing to its stability and resistance to heat and humidity, we aim to shed light on the extraordinary potential of K₂AgBiI₆. Our study provides valuable insights for researchers engaged in tailored material design. We anticipate that the exceptional electronic properties of K₂AgBiI₆ will not only redefine the boundaries of materials engineering but also catalyze unprecedented advances in sustainable technology. Employing the powerful computational tool CASTEP, we conducted detailed electronic structure calculations within the framework of Density Functional Theory (DFT) to unravel the electronic properties of the double perovskite K₂AgBiI₆. Our investigation thoroughly explored structural properties, band structure, total density of states (DOS), and partial density of states (PDOS). Furthermore, we systematically examined the influence of different exchange-correlation functionals, including LDA, GGA, and m-GGA, on the electronic and optical features of the material by presenting a comparative analysis of these approximations.

In this study, we present a novel numerical model that incorporates the effects of spontaneous and piezoelectric polarization-induced electric fields, along with multiple intersubband transitions, to investigate the optical absorption characteristics of InGaN/GaN strained single and double quantum well’s structures. Focusing on the role of Indium surface segregation (ISS) in polar QW structures, we examine its influence on intersubband transition-related optical absorption and the resulting spectral behavior. Specific structural configurations are designed to achieve four-energy-level with single and double quantum wells, optimized for three-color absorption within the near-infrared range. Our findings reveal that the combined impact of ISS and strain induces a notable red shift in the absorption spectra, with shifts varying significantly across different intersubband transitions. These findings underscore the potential of strained InGaN-based semiconductor compounds for developing advanced multi-color photonic devices, including near-infrared photodetectors and lasers, by harnessing their tunable optical properties

The current work presents a new structure based on Au/PVA/SiO2/p-Si/Al that has not been studied before. An aqueous solution of polyvinyl alcohol (PVA) polymer gel was deposited on the surface of SiO2/Si using the spin-coating technique. The silicon wafer was left to be oxidized in a furnace at 1170 k for thirty minutes, creating an interdiffusion layer of SiO2. The variations in the dielectric constant (Є′), dielectric loss (Є″), and dielectric tangent (tanδ) with the change in the frequency, voltage, and temperature were analyzed. The results showed an increase in the dielectric constant (Є′) and a decrease in the dielectric loss (Є″) and tangent (tanδ); thus, the Au/PVA/SiO2/p-Si/Al heterostructure has opened up new frontiers for the semiconductor industry, especially for capacitor manufacturing. The Cole–Cole diagrams of the Є″ and Є′ have been investigated at different temperatures and voltages. The ideality factor (n), barrier height (Φb), series resistance (Rs), shunt resistance (Rsh), and rectification ratio (RR) were also measured at different temperatures.

The current work presents the possibility of tuning the dielectric parameters by changing the temperature, voltage, and frequency. The unusual behavior of some parameters was attributed to the lattice mismatch constant between gallium arsenide (GaAs) and silicon (Si) and the crystal defects between them. In this article, a thin GaAs film has been grown on Si substrates by liquid phase epitaxial (LPE) as n-GaAs/p-Si heterostructure. Despite the lattice mismatch between GaAs and Si, our interest in this article was focused on investigating the electrical and dielectric properties by I-V and C-V measurements. This was distinguished in the behavior of the dielectric properties such as the imaginary part of modules M″, the real and imaginary part of electrical conductivity σ^′ac and σ^″ac, respectively, which has not been seen before at high frequencies.

By using DFT simulations employing the GGA/PBE and LDA/CA-PZ approximations, the effects of the Hubbard U correction on the crystal structure, electronic properties, and chemical bands of the cubic phase (Pm3̲m) of STO were investigated. Our findings showed that the cubic phase (Pm3̲m) STO’s band gaps and lattice parameters/volume are in reasonably good accordance with the experimental data, supporting the accuracy of our model. By applying the DFT + U method, we were able to obtain band gaps that were in reasonably good agreement with the most widely used experimental band gaps of the cubic (Pm3̲m) phase of STO, which are 3.20 eV, 3.24 eV, and 3.25 eV. This proves that the Hubbard U correction can overcome the underestimation of the band gaps induced by both GGA/PBE and LDA/CA-PZ approximations. On the other hand, the Sr-O and Ti-O bindings appear predominantly ionic and covalent, respectively, based on the effective valence charges, electron density distribution, and partial density of states analyses. In an attempt to enhance the performance of STO for new applications, these results might also be utilized as theoretical guidance, benefitting from our precise predicted values of the gap energies of the cubic phase (Pm3̲m).

The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombination, and interface polarization is proposed to examine the solar cells' performance numerically. The functioning processes of n-In_0.42Ga_0.58N/i-(In, Ga)N/p-In_0.42Ga_0.58N solar cells at room temperature were investigated by calculating their characteristics for the AM1.5D, AM1.5G, and AM0 American Society for Testing and Materials experimental data. Our results show that the indium content, thickness, and defect density of the intrinsic layer strongly influence the characteristics of the InGaN solar cells. As the In-mole fraction increases, V_oc, FF and efficiency diminish to reach an independent regime for high In-content. A higher-quality 2μm−In_0.43Ga_0.57N for 10¹⁴cm⁻³ defect concentration can exhibit as high an efficiency as ≅11.3%, dropping to ≅4.12% for 10¹⁶cm⁻³ one.

This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.