Haddou El Ghazi
Authored
10 records found as author
The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley ...
Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields
Investigation of the Harmonic and Inharmonic Potentials
Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confi ...
Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells
Interplay between intense laser field and higher-order anharmonic potentials
This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework inc ...
High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance
A Study with 1 MeV Proton Irradiation
Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells
The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity
The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al, Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga conc ...
The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al, Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga conc ...
Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells
Temperature and electric field effects
In this study, using a numerical method within the effective mass approximation, we theoretically investigated the effects of temperature and electric field on the binding energy of an on-centre hydrogenic impurity in (Al,Ga)N/AlN double quantum wells. For rectangular, parabol ...
Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells
Temperature and electric field effects
In this study, using a numerical method within the effective mass approximation, we theoretically investigated the effects of temperature and electric field on the binding energy of an on-centre hydrogenic impurity in (Al,Ga)N/AlN double quantum wells. For rectangular, parabol ...