Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells
The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity
Redouane En-nadir (University of Sidi Mohamed Ben Abdullah)
Mohamed A. Basyooni (Selçuk University, TU Delft - Dynamics of Micro and Nano Systems)
Mohammed Tihtih (University of Miskolc)
Walid Belaid (Selçuk University)
Ilyass Ez-zejjari (Hassan II University of Casablanca)
El Ghmari Majda Majda (Hassan II University of Casablanca)
Haddou El Ghazi (Hassan II University of Casablanca, University of Sidi Mohamed Ben Abdullah)
Salim Ahmed (University of Sidi Mohamed Ben Abdullah)
Izeddine Zorkani (University of Sidi Mohamed Ben Abdullah)
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Abstract
Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.
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