Redouane En-nadir
Authored
20 records found as author
The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley ...
Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields
Investigation of the Harmonic and Inharmonic Potentials
Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confi ...
Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields
Investigation of the Harmonic and Inharmonic Potentials
Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confi ...
Negative Photoconductivity in 2D α-MoO3/Ir Self-Powered Photodetector
Impact of Post-Annealing
Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells
Interplay between intense laser field and higher-order anharmonic potentials
This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework inc ...
High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance
A Study with 1 MeV Proton Irradiation
Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells
The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity
Iridium/Silicon Ultrathin Film for Ultraviolet Photodetection
Harnessing Hot Plasmonic Effects
The phenomenon of hot carriers, which are generated through the nonradiative decay of surface plasmons in ultrathin metallic films, offers an intriguing opportunity for subbandgap photodetection even at room temperature. These hot carriers possess sufficient energy to inject i ...
Iridium/Silicon Ultrathin Film for Ultraviolet Photodetection
Harnessing Hot Plasmonic Effects
The phenomenon of hot carriers, which are generated through the nonradiative decay of surface plasmons in ultrathin metallic films, offers an intriguing opportunity for subbandgap photodetection even at room temperature. These hot carriers possess sufficient energy to inject i ...
Iridium/Silicon Ultrathin Film for Ultraviolet Photodetection
Harnessing Hot Plasmonic Effects
The phenomenon of hot carriers, which are generated through the nonradiative decay of surface plasmons in ultrathin metallic films, offers an intriguing opportunity for subbandgap photodetection even at room temperature. These hot carriers possess sufficient energy to inject i ...
Impact of thickness on optoelectronic properties of α-MoO3 film photodetectors
Integrating first-principles calculations with experimental analysis
This study focused on investigating the optoelectronic properties of molybdenum trioxide (α-MoO3) thin films using the atomic layer deposition (ALD) technique through different cycle numbers and theoretical investigation. Initial band gap calculations using standard ...
Impact of thickness on optoelectronic properties of α-MoO3 film photodetectors
Integrating first-principles calculations with experimental analysis
This study focused on investigating the optoelectronic properties of molybdenum trioxide (α-MoO3) thin films using the atomic layer deposition (ALD) technique through different cycle numbers and theoretical investigation. Initial band gap calculations using standard ...
Impact of thickness on optoelectronic properties of α-MoO3 film photodetectors
Integrating first-principles calculations with experimental analysis
This study focused on investigating the optoelectronic properties of molybdenum trioxide (α-MoO3) thin films using the atomic layer deposition (ALD) technique through different cycle numbers and theoretical investigation. Initial band gap calculations using standard ...
Self-powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self-powered photodetectors (PDs) have several advantages over traditional PDs, including ...
Self-powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self-powered photodetectors (PDs) have several advantages over traditional PDs, including ...
In this study, we prepared a homogeneous fine powder of barium titanate (BaTiO3, BT) doped with different concentrations of strontium (x = 0, 0.05, 0.125, 0.15, 0.20, and 0.3) and having the composition Ba1-xSrxTiO3 (barium strontium ...
In this study, we prepared a homogeneous fine powder of barium titanate (BaTiO3, BT) doped with different concentrations of strontium (x = 0, 0.05, 0.125, 0.15, 0.20, and 0.3) and having the composition Ba1-xSrxTiO3 (barium strontium ...
Photonic crystal (PhC) has been studied for their potential to improve the efficiency of Cu2ZnSnS4 solar cells by increasing the generated photocurrent by integrating it as a back reflector with almost zero transmission through the absorption active zone ...