Negative Photoconductivity in 2D α-MoO3/Ir Self-Powered Photodetector

Impact of Post-Annealing

Journal article (2023)

Authors

Mohamed A. Basyooni-M.Kabatas Selçuk University, Dynamics of Micro and Nano Systems - Mechanical, Maritime and Materials Engineering
Shrouk E. Zaki Selçuk University
Khalid Rahmani Mohammed V University
Redouane En-nadir University Sidi Mohammed Ben Abdellah
Yasin Ramazan Eker Necmettin Erbakan University
Research Group
Dynamics of Micro and Nano Systems (Mechanical, Maritime and Materials Engineering) (TU Delft)
Copyright: © 2023 Mohamed A. Basyooni, Shrouk E. Zaki, Khalid Rahmani, Redouane En-nadir, Yasin Ramazan Eker
DOI: https://doi.org/10.3390/ma16206756
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Published Date

2023

Language

English

Faculty

Mechanical, Maritime and Materials Engineering

Department

Precision and Microsystems Engineering

Research Group

Dynamics of Micro and Nano Systems

Abstract

Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 × 1011/cm², which subsequently increases to 6.74 × 1012/cm² after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO3 layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.