AJ
Anouar Jorio
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6 records found
1
Journal article
(2024)
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Hassan Abboudi, Redouane En-nadir, Mohamed A. Basyooni-M.Kabatas, Ayoub El Baraka, Walid Belaid, Ilyass Ez-zejjari, Haddou El Ghazi, Anouar Jorio, Izeddine Zorkani
This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.
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This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.
Soiling, Adhesion, and Surface Characterization of Concentrated Solar Power Reflectors
Insights and Challenges in the MENA Region
Journal article
(2024)
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Ayoub El Baraka, Redouane En-nadir, Mohamed A. Basyooni-M.Kabatas, Anouar Jorio, Asmae Khaldoun
Desert environments are prime locations for concentrated solar power (CSP) applications due to abundant direct normal irradiance. Despite this advantage, the accumulation and adhesion of dust on CSP mirror surfaces present significant challenges to plant efficiency. This paper comprehensively explores soiling phenomena and dust adhesion mechanisms, complemented by advanced measurement techniques tailored for CSP reflector mirrors. By elucidating the factors influencing dust accumulation and delving into the thermodynamics of self-cleaning coatings, alongside an analysis of various mirror materials, this study aims to enrich our understanding of soiling in CSP systems. This study aims to provide valuable insights that will help develop strategies to reduce dust-related efficiency losses in CSP plants, ultimately supporting the development of more reliable and sustainable solar energy solutions for the MENA region.
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Desert environments are prime locations for concentrated solar power (CSP) applications due to abundant direct normal irradiance. Despite this advantage, the accumulation and adhesion of dust on CSP mirror surfaces present significant challenges to plant efficiency. This paper comprehensively explores soiling phenomena and dust adhesion mechanisms, complemented by advanced measurement techniques tailored for CSP reflector mirrors. By elucidating the factors influencing dust accumulation and delving into the thermodynamics of self-cleaning coatings, alongside an analysis of various mirror materials, this study aims to enrich our understanding of soiling in CSP systems. This study aims to provide valuable insights that will help develop strategies to reduce dust-related efficiency losses in CSP plants, ultimately supporting the development of more reliable and sustainable solar energy solutions for the MENA region.
Journal article
(2024)
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Hassan Abboudi, Haddou El Ghazi, Redouane En-nadir, Mohamed A. Basyooni, Anouar Jorio, Izeddine Zorkani
This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.
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This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.
Journal article
(2023)
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Walid Belaid, Haddou El Ghazi, Shrouk E. Zaki, Mohamed A. Basyooni, Mohammed Tihtih, Redouane Ennadir, Hamdi Şükür Kılıç, Izeddine Zorkani, Anouar Jorio
The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al, Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.
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The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al, Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.
High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance
A Study with 1 MeV Proton Irradiation
This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are 5.3×108,5.3×1010,5×1011,5×1012, and 5×1013 protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.
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This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are 5.3×108,5.3×1010,5×1011,5×1012, and 5×1013 protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.
Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells
Temperature and electric field effects
Journal article
(2022)
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Walid Belaid, Haddou El Ghazi, Mohamed A. Basyooni, Izeddine Zorkani, Anouar Jorio
In this study, using a numerical method within the effective mass approximation, we theoretically investigated the effects of temperature and electric field on the binding energy of an on-centre hydrogenic impurity in (Al,Ga)N/AlN double quantum wells. For rectangular, parabolic, and triangular finite potential confinements, the ground and the two lowest excited states binding energies are investigated. Regardless of the shape, our findings show that the size, temperature, and applied electric field induce huge impacts on the binding energy. It reveals that the binding energy (1) is higher in rectangular shape than for other forms, (2) is reduced as the temperature and/or electric field are increased, and (3) is less sensitive to temperature and applied electric field in rectangular confinement compared to other profiles. The results we obtained are very consistent with the literature findings.
...
In this study, using a numerical method within the effective mass approximation, we theoretically investigated the effects of temperature and electric field on the binding energy of an on-centre hydrogenic impurity in (Al,Ga)N/AlN double quantum wells. For rectangular, parabolic, and triangular finite potential confinements, the ground and the two lowest excited states binding energies are investigated. Regardless of the shape, our findings show that the size, temperature, and applied electric field induce huge impacts on the binding energy. It reveals that the binding energy (1) is higher in rectangular shape than for other forms, (2) is reduced as the temperature and/or electric field are increased, and (3) is less sensitive to temperature and applied electric field in rectangular confinement compared to other profiles. The results we obtained are very consistent with the literature findings.