A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

Conference paper (2019)

Authors

Shaogang Wang Chongqing University
C. Tan Electronic Components, Technology and Materials - EEMCS , Chongqing University
Liming Wang Chongqing University
Houcai Luo Chongqing University
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Xianping Chen Chongqing University
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
IGBT EMI noise Hole path On-state voltage Partial carrier layer Turn-off loss
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Published Date

01-03-2019

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under Eoff of 8mJ/cm2, the VCE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.

Files

08731110.pdf
(.pdf | 0.318 Mb)