A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

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A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

Conference Paper (2019)

Author(s)

Shaogang Wang (Chongqing University)

C. Tan (Chongqing University, TU Delft - Electronic Components, Technology and Materials)

Liming Wang (Chongqing University)

Hou-Cai Luo (Chongqing University)

Guo-Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

Xianping Chen (Chongqing University)

Research Group

Electronic Components, Technology and Materials

DOI related publication

https://doi.org/10.1109/EDTM.2019.8731110

IGBT EMI noise Hole path On-state voltage Partial carrier layer Turn-off loss

To reference this document use:

https://resolver.tudelft.nl/uuid:96e9705b-d187-4e3f-8caf-240fd86ed388

More Info

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Publication Year

2019

Language

English

Research Group

Electronic Components, Technology and Materials

Pages (from-to)

410-412

ISBN (print)

978-1-5386-6509-1

ISBN (electronic)

978-1-5386-6508-4

Abstract

A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under E_off of 8mJ/cm², the V_CE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.

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