Josephson Effect in a Few-Hole Quantum Dot

Journal Article (2018)
Author(s)

Joost Ridderbos (University of Twente)

Matthias Brauns (Institute of Science and Technology Austria, University of Twente)

Jie Shen (TU Delft - QRD/Kouwenhoven Lab)

Folkert K. de Vries (TU Delft - QRD/Kouwenhoven Lab)

Ang Li (Beijing University of Technology, Eindhoven University of Technology)

Erik P.A.M. Bakkers (TU Delft - QN/Bakkers Lab, Eindhoven University of Technology)

Alexander Brinkman (University of Twente)

Floris A. Zwanenburg (University of Twente)

Research Group
QRD/Kouwenhoven Lab
DOI related publication
https://doi.org/10.1002/adma.201802257 Final published version
More Info
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Publication Year
2018
Language
English
Research Group
QRD/Kouwenhoven Lab
Article number
1802257
Pages (from-to)
1-6
Downloads counter
267

Abstract

A Ge–Si core–shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.