Strong pinning linear defects formed at the coherent growth transition of pulsed-laser-deposited YBa2⁢Cu3⁢O7−δ films

Journal Article (2002)
Author(s)

B. Dam (Vrije Universiteit Amsterdam)

J. M. Huijbregtse (Vrije Universiteit Amsterdam)

J. H. Rector (Vrije Universiteit Amsterdam)

DOI related publication
https://doi.org/10.1103/PhysRevB.65.064528 Final published version
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Publication Year
2002
Language
English
Journal title
Physical Review B - Condensed Matter and Materials Physics
Issue number
6
Volume number
65
Article number
064528
Downloads counter
69

Abstract

Linear defects are important pinning sites for vortices in high-temperature superconductors. In YBa2⁢Cu3⁢O7−δ thin films, the linear defects responsible for high critical currents are threading dislocations formed near the substrate interface. Investigating the first stages of growth of pulsed-lased-deposited YBa2⁢Cu3⁢O7−δ on single terminated (100) SrTiO3 substrates, we study the genesis of these dislocations. We find that the formation of linear defects occurs above a certain critical layer thickness at which a coherent growth transition takes place. Coherent islands are formed, surrounded by highly strained trenches. These trenches facilitate the formation of dislocation half-loops. Such half-loops relieve the misfit strain and form misfit and threading dislocations. The number of threading dislocations thus depends on the island density. This model explains both the short-range lateral order of the threading dislocations and their decreasing density at elevated substrate temperatures.