SiC MOSFET Threshold-Voltage Instability under High Temperature Aging
Yang Liu (Chongqing University)
Xianping Chen (Guilin University of Electronic Technology, Chongqing University)
ZhaoHui Zhao (Beijing COMPO Advanced Technology Co.)
ZhiGang Li (Beijing COMPO Advanced Technology Co.)
CaiTao Lu (Beijing COMPO Advanced Technology Co.)
JingGuo Zhang (GRIPM Advanced Materials Co., Beijing)
Huaiyu Ye (Chongqing University)
Sau Wee Koh (Huawei Technologies Company Ltd.)
LiGen Wang (General Research Institute for Nonferrous Metals)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
More Info
expand_more
Abstract
A systematic study of discrete SiC MOSFETs' reliability under High Temperature stress has been carried out. High Temperature stress is performed in this work to characterize the threshold voltage instability. To investigate the degradation mechanism of devices, simulation according to the structure of MOSFET cell has been performed. The result shows that the threshold voltages change trends of both MOSFETs are the same, including drop-down period at very early time due to a decrease of doping concentration at channel region and gradual raise-up period at in the rest of time resulting from decline of interface charge.
No files available
Metadata only record. There are no files for this record.