Tilt series STEM simulation of a 25×25×25 nm semiconductor with characteristic X-ray emission

Journal article (2016)

Authors

R.A. Aveyard ImPhys/Quantitative Imaging
B. Rieger ImPhys/Quantitative Imaging
Research Group
ImPhys/Quantitative Imaging
Simulation Tomography X-ray Semiconductor STEM EDS HAADF
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Published Date

01-12-2016

Language

English

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Research Group

ImPhys/Quantitative Imaging

Abstract

The detection and quantification of fabrication defects is vital to the ongoing miniaturization of integrated circuits. The atomic resolution of HAADF-STEM combined with the chemical sensitivity of EDS could provide the means by which this is achieved for the next generation of semiconductor devices. To realize this, however, a streamlined acquisition and analysis procedure must first be developed. Here, we report the simulation of a HAADF-STEM and EDS tilt-series dataset of a PMOS finFET device which will be used as a testbed for such a development. The methods used to calculate the data and the details of the specimen model are fully described here. The dataset consists of 179 projections in 2° increments with HAADF images and characteristic X-ray maps for each projection. This unusually large calculation has been made possible through the use of a national supercomputer and will be made available for the development and assessment of reconstruction and analysis procedures for this highly significant industrial application.