AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Conference paper (2018)

Authors

R. Sokolovskij Electronic Components, Technology and Materials - EEMCS , Southern University of Science and Technology
J. Zhang Fudan University
Y. Jiang Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology
Ganhui Chen Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Hongyu Yu Southern University of Science and Technology, Shenzhen Key Laboratory of the Third Generation Semi-conductor
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2018 R. Sokolovskij, J. Zhang, Yang Jiang, Ganhui Chen, Kouchi Zhang, Hongyu Yu
DOI
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https://doi.org/10.1109/ICSICT.2018.8564904
Extrapolation Fourier transforms Image fusion Image enhancement Microwave imaging Image resolution Approximation theory Matrix algebra Inverse transforms
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract


Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H
2
S and compare them to H
2
and NO
2
. Finally we demonstrate recent results of NO
2
detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices.