Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.
Journal Article
(2011)
Author(s)
G. Zhu (TU Delft - Light Metals Processing)
Y Dai (External organisation)
D Shu (External organisation)
Y Xiao (TU Delft - Light Metals Processing)
Yongxiang Yang (TU Delft - Light Metals Processing)
J. Wang (External organisation)
B. Sun (External organisation)
Rob Boom (TU Delft - Light Metals Processing)
Research Group
Light Metals Processing
To reference this document use:
https://resolver.tudelft.nl/uuid:ad09f5fd-5858-4433-8530-efc112dfdefc
More Info
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Publication Year
2011
Language
English
Research Group
Light Metals Processing
Volume number
19
Pages (from-to)
1036-1040
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