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Journal article (2)

2 records found

1

Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.

Journal article (2011) - G Zhu (author) , Y Dai (author) , D Shu (author) , Y. Xiao (author) , Yongxiang Yang (author) , J Wang (author) , B. Sun (author) , R. Boom (author)

First-principles study of point defects and Si site preference in Al3Ti.

Journal article (2011) - G Zhu (author) , Y Dai (author) , D Shu (author) , Y. Xiao (author) , Yongxiang Yang (author) , J. Wang (author) , B. Sun (author)