Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection
Robert Sokolovskij (State Key Laboratory of Solid State Lighting)
Elina Iervolino (Southern University of Science and Technology )
Changhui Zhao (Southern University of Science and Technology )
Fei Wang (Southern University of Science and Technology )
Hongyu Yu (Southern University of Science and Technology )
Fabio Santagata (TU Delft - Electronic Components, Technology and Materials)
Pasqualina M. Sarro (TU Delft - Electronic Components, Technology and Materials)
Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode Wg/Lg ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a Wg/Lg from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.