Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

None, None; None, None; None, None; None, None; None, None; None, None; None, None

Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

Conference Paper (2014)

Author(s)

J.P. Bermundo (Nara Institute of Science and Technology)

Y. Ishikawa (Nara Institute of Science and Technology)

MN Fujii (Nara Institute of Science and Technology)

M. van der Zwan (TU Delft - Electronic Components, Technology and Materials)

T. Nonaka (AZ Electronic Materials Manufacturing Japan)

Ryoichi Ishihara (TU Delft - Quantum Integration Technology)

Y Uraoka (Nara Institute of Science and Technology)

Research Group

Electronic Components, Technology and Materials

Passivation Excimer laser annealing Oxide semiconductors Polysilsesquioxane

To reference this document use:

https://resolver.tudelft.nl/uuid:b99abe8a-d5bd-4afd-8a10-5797ea1a608b

More Info

expand_more

Publication Year

2014

Language

English

Research Group

Electronic Components, Technology and Materials

Volume number

1

Pages (from-to)

245-246

ISBN (print)

978-1-5108-2779-0

Abstract

We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. © 2014 ITE and SID.

No files available

Metadata only record. There are no files for this record.