Electrostatic control of the anomalous Hall effect in SrRuO3

Master thesis (2019)

Authors

H. Spring Applied Sciences

Contributors

A. Caviglia QN/Caviglia Lab - AS (mentor)
A.R. Akhmerov QN/Akhmerov Group - AS (graduation committee member)
T. van der Sar QN/vanderSarlab - AS (graduation committee member)
Faculty
Applied Sciences, Applied Sciences
Copyright: © 2019 Hélène Spring
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Published Date

23-05-2019

Language

English

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Faculty

Applied Sciences

Abstract

In this study, ultrathin films of the itinerant 4d ferromagnet SrRuO3 were epitaxially deposited on SrTiO3 and capped with a thin LaAlO3 layer. Top gates and a dielectric layer were patterned onto contacted films and magnetotransport properties were characterized at low temperatures as a function of top gate voltage. A particular focus was placed on the anomalous Hall resistivity. The magnitude of the Hall signal and the sheet resistance were shown to vary with top gate voltage. In particular, the anomalous Hall loops were compared to numerical tight-binding models. The model is proposed as an alternate explanation to the skyrmion picture and as a complement to the two-channel phenomenological model put forth to explain the unusual low-temperature anomalous signal of ultrathin SrRuO3 . Model predictions were found to be valid at
low temperatures in semiconducting Ru-deficient SrRuO3 films.