Growth mode issues in epitaxy of complex oxide thin films

Journal Article (1998)
Author(s)

B. Dam (Vrije Universiteit Amsterdam)

B. Stäuble-Pümpin (Universidad Nacional de Colombia - Medellin)

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DOI related publication
https://doi.org/10.1023/A:1008882309295 Final published version
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Publication Year
1998
Language
English
Affiliation
External organisation
Journal title
Journal of Materials Science: Materials in Electronics
Issue number
3
Volume number
9
Pages (from-to)
217-226
Downloads counter
51

Abstract

We discuss the hetero-epitaxy of complex oxides taking YBa2Cu3O7-δ as an example. Special emphasis is on films grown by pulsed laser deposition (PLD), but other growth techniques are also discussed. Lattice mismatch in three directions is responsible for the fact that a real single crystalline YBa2Cu3O7-δ thin film has not yet been obtained. Nevertheless, growth features typically observed on single crystals (e.g. growth spirals as well as repeated nucleation and growth) are often found on YBa2Cu3O7-δ thin films. We discuss how surface diffusion and supersaturation influence the surface morphology (as observed by atomic force and scanning tunnelling microcopies (AFM/STM)) of complex oxide thin films. In particular, we conclude that the kinetic energy of the impinging adatoms affects the surface diffusivity and therefore the growth mode.