Charge Photogeneration and Transport in AgBiS2 Nanocrystal Films for Photovoltaics

Journal article (2019)

Authors

S.L. Diedenhofen ChemE/Opto-electronic Materials - AS
Maria Bernechea Universidad de Zaragoza, Cardiff University
K.M. Felter ChemE/Opto-electronic Materials - AS
F.C. Grozema ChemE/Opto-electronic Materials - AS
L.D.A. Siebbeles ChemE/Opto-electronic Materials - AS
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
Copyright: © 2019 S.L. Diedenhofen, Maria Bernechea, K.M. Felter, F.C. Grozema, L.D.A. Siebbeles
DOI: https://doi.org/10.1002/solr.201900075
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Published Date

2019

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

Solution-processed AgBiS2 nanocrystal films are a promising material for nontoxic, earth-abundant solar cells. While solar cells with good device efficiency are demonstrated, so far, hardly anything is known about charge generation, transport, and recombination processes in these films. Here, a photoinduced time-resolved microwave conductivity study on AgBiS2 nanocrystal films is presented. By modeling the experimental data with density-dependent recombination processes, the product of the temperature-dependent electron and hole quantum yield and mobility, and the electron and hole recombination kinetics are determined.

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