Cavity-enhanced single artificial atoms in silicon
Valeria Saggio (Massachusetts Institute of Technology)
C. Errando Herranz (Universität Münster, Massachusetts Institute of Technology)
Samuel Gyger (Massachusetts Institute of Technology, KTH Royal Institute of Technology)
Christopher Panuski (Massachusetts Institute of Technology)
Mihika Prabhu (Massachusetts Institute of Technology)
L. De Santis (Massachusetts Institute of Technology, TU Delft - QuTech Advanced Research Centre, TU Delft - QID/Hanson Lab)
Ian Christen (Massachusetts Institute of Technology)
Connor Gerlach (Massachusetts Institute of Technology)
Marco Colangelo (Massachusetts Institute of Technology)
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Abstract
Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world’s most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.
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