The negatively charged tin-vacancy (SnV⁻) center in diamond has emerged as a promising platform for quantum computing and quantum networks. To connect SnV⁻ qubits in large networks, in situ tuning and stabilization of their optical transitions are essential to overcome static and dynamic frequency offsets induced by the local environment. Here, we report on the large-range optical frequency tuning of diamond SnV⁻ centers using micro-electro-mechanically mediated strain control in photonic integrated waveguide devices. We realize a tuning range of >40 GHz, covering a major part of the inhomogeneous distribution. In addition, we employ real-time feedback on the strain environment to stabilize the resonance frequency and mitigate spectral wandering. These results provide a path for on-chip scaling of diamond SnV-based quantum networks.

We demonstrate large-range tuning of the optical transition of Tin-Vacancies (SnV) in diamond using electro-mechanical-induced strain, realizing >40 GHz tuning. We employ real-time feedback on the strain environment to stabilize the resonant frequency.

Color centers integrated with nanophotonic devices have emerged as a compelling platform for quantum science and technology. Here, we integrate tin-vacancy centers in a diamond waveguide and investigate the interaction with light at the single-photon level in both reflection and transmission. We observe single-emitter-induced extinction of the transmitted light up to 25% and measure the nonlinear effect on the photon statistics. Furthermore, we demonstrate fully tunable interference between the reflected single-photon field and laser light backscattered at the fiber end and show the corresponding controlled change between bunched and antibunched photon statistics in the reflected field.

Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world’s most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.

We introduce a quantum system-on-chip (QSoC) architecture based on (I) a co-designed diamond quantum memory array, (II) a custom CMOS backplane, and (III) a protocol for fully connected cluster state generation.

Diamond tin-vacancy centers have emerged as a promising platform for quantum information science and technology. A key challenge for their use in more-complex quantum experiments and scalable applications is the ability to prepare the center in the desired charge state with the optical transition at a predefined frequency. Here we report on heralding such successful preparation using a combination of laser excitation, photon detection, and real-time logic. We first show that fluorescence photon counts collected during an optimized resonant probe pulse strongly correlate with the subsequent charge state and optical-transition frequency, enabling real-time heralding of the desired state through threshold photon counting. We then implement and apply this heralding technique to photoluminescence-excitation measurements, coherent optical driving, and an optical Ramsey experiment, finding strongly increased optical coherence with increasing threshold. Finally, we demonstrate that the prepared optical frequency follows the probe laser across the inhomogeneous linewidth, enabling tuning of the transition frequency over multiple homogeneous linewidths.

We present our optimized diamond fabrication process based on quasi-isotropic crystal-plane-dependent reactive-ion-etching at low and high temperature plasma regime. We demonstrate successful integration of SnV centers in diamond waveguides showing quantum non-linear effects. We report on our latest results on all-diamond photonic crystal cavities.

We demonstrate heralded initialization of charge state and optical transition frequency of diamond tin-vacancy centers, using (off-)resonant lasers, photon detection and real-time logic. Using this, we show frequency tunability > 100 MHz and strongly improved optical coherence.

Colour centres in diamond have emerged as a leading solid-state platform for advancing quantum technologies, satisfying the DiVincenzo criteria¹ and recently achieving quantum advantage in secret key distribution². Blueprint studies^3–5 indicate that general-purpose quantum computing using local quantum communication networks will require millions of physical qubits to encode thousands of logical qubits, presenting an open scalability challenge. Here we introduce a modular quantum system-on-chip (QSoC) architecture that integrates thousands of individually addressable tin-vacancy spin qubits in two-dimensional arrays of quantum microchiplets into an application-specific integrated circuit designed for cryogenic control. We demonstrate crucial fabrication steps and architectural subcomponents, including QSoC transfer by means of a ‘lock-and-release’ method for large-scale heterogeneous integration, high-throughput spin-qubit calibration and spectral tuning, and efficient spin state preparation and measurement. This QSoC architecture supports full connectivity for quantum memory arrays by spectral tuning across spin–photon frequency channels. Design studies building on these measurements indicate further scaling potential by means of increased qubit density, larger QSoC active regions and optical networking across QSoC modules.

A central goal for quantum technologies is to develop platforms for precise and scalable control of individually addressable artificial atoms with efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related G-center, exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator photonics. We demonstrate the generation, individual addressing, and spectral trimming of G-center artificial atoms in a silicon-on-insulator photonic integrated circuit platform. Focusing on the neutral charge state emission at 1278 nm, we observe waveguide-coupled single photon emission with narrow inhomogeneous distribution with standard deviation of 1.1 nm, excited state lifetime of 8.3 ± 0.7 ns, and no degradation after over a month of operation. In addition, we introduce a technique for optical trimming of spectral transitions up to 300 pm (55 GHz) and local deactivation of single artificial atoms. This non-volatile spectral programming enables alignment of quantum emitters into 25 GHz telecommunication grid channels. Our demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated photonics.

We show enhanced single-photon emission from artificial atoms in silicon by coupling them to cavities with high quality factors and small mode volumes, thus enabling enhanced light-matter interactions which are crucial for quantum technologies.

Group-IV colour centres in diamond are a promising light-matter interface for quantum networking devices. We demonstrate multiaxis coherent control of the SnV spin-qubit via an all-optical stimulated Raman drive between the ground and excited states.

We demonstrate silicon color centers coupled to foundry-compatible silicon waveguides. We produced G-centers via carbon implantation in commercial silicon-on-insulator waveguides and measure through-waveguide single-photon emission in the telecommunications O-band.

We fabricate single tin-vacancy centres in diamond, we perform spectroscopy and coherent population trapping to verify optical driving of the spin states. We investigate the integration in diamond waveguides to realise an efficient spin-photon interface.

Optical quantum technologies require strong light-matter interaction. We couple silicon color center ensembles to high-Q/V cavities and show enhanced emission in the telecommunications O-band.

Quantum emitters in diamond are leading optically accessible solid-state qubits. Among these, Group IV-vacancy defect centers have attracted great interest as coherent and stable optical interfaces to long-lived spin states. Theory indicates that their inversion symmetry provides first-order insensitivity to stray electric fields, a common limitation for optical coherence in any host material. Here we experimentally quantify this electric field dependence via an external electric field applied to individual tin-vacancy (SnV) centers in diamond. These measurements reveal that the permanent electric dipole moment and polarizability are at least 4 orders of magnitude smaller than for the diamond nitrogen vacancy (NV) centers, representing the first direct measurement of the inversion symmetry protection of a Group IV defect in diamond. Moreover, we show that by modulating the electric-field-induced dipole we can use the SnV as a nanoscale probe of local electric field noise, and we employ this technique to highlight the effect of spectral diffusion on the SnV.

Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions toward spin-photon-entanglement schemes. Here, we demonstrate multiaxis coherent control of the SnV spin qubit via an all-optical stimulated Raman drive between the ground and excited states. We use coherent population trapping and optically driven electronic spin resonance to confirm coherent access to the qubit at 1.7 K and obtain spin Rabi oscillations at a rate of ω/2π=19.0(1) MHz. All-optical Ramsey interferometry reveals a spin dephasing time of T2∗=1.3(3) μs, and four-pulse dynamical decoupling already extends the spin-coherence time to T2=0.30(8) ms. Combined with transform-limited photons and integration into photonic nanostructures, our results make the SnV a competitive spin-photon building block for quantum networks.