The negatively charged tin-vacancy (SnV⁻) center in diamond has emerged as a promising platform for quantum computing and quantum networks. To connect SnV⁻ qubits in large networks, in situ tuning and stabilization of their optical transitions are essential to overcome static and dynamic frequency offsets induced by the local environment. Here, we report on the large-range optical frequency tuning of diamond SnV⁻ centers using micro-electro-mechanically mediated strain control in photonic integrated waveguide devices. We realize a tuning range of >40 GHz, covering a major part of the inhomogeneous distribution. In addition, we employ real-time feedback on the strain environment to stabilize the resonance frequency and mitigate spectral wandering. These results provide a path for on-chip scaling of diamond SnV-based quantum networks.

Low-loss visible-light photonic circuits are crucial for high-performance photonic quantum processors. By using aluminum oxide (Al₂O₃) for its low visible-light absorption, we achieved waveguides exhibiting an exceptionally low propagation loss (1.39 dB/cm for the transverse electric mode) at red-light wavelengths. Directional coupler beam splitters fabricated using this platform exhibited good controllability of the optical splitting ratios. Furthermore, we fabricated a half beam splitter, which is an essential component of entangled photon generation in quantum optics. These results represent a significant advance toward developing low-loss photonic circuits, paving the way for improved performance in photonic quantum processors.

We demonstrate large-range tuning of the optical transition of Tin-Vacancies (SnV) in diamond using electro-mechanical-induced strain, realizing >40 GHz tuning. We employ real-time feedback on the strain environment to stabilize the resonant frequency.