The properties of pulsed laser deposited YH2 films for switchable devices

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The properties of pulsed laser deposited YH2 films for switchable devices

Journal Article (2003)

Author(s)

A. C. Lokhorst (Vrije Universiteit Amsterdam)

M. C.R. Heijna (Vrije Universiteit Amsterdam)

J. H. Rector (Vrije Universiteit Amsterdam)

I. A.M.E. Giebels (Vrije Universiteit Amsterdam)

N. J. Koeman (Vrije Universiteit Amsterdam)

B. Dam (Vrije Universiteit Amsterdam)

Vapour deposition Thin films Light absorption and reflection

DOI related publication

https://doi.org/10.1016/S0925-8388(03)00118-X Final published version

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https://resolver.tudelft.nl/uuid:cab9518a-fea1-4978-a177-0e2a943df458

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Publication Year

2003

Language

English

Journal title

Journal of Alloys and Compounds

Volume number

356-357

Pages (from-to)

536-540

Event

Downloads counter

84

Abstract

In-situ deposited YH2 films ranging from epitaxial to nanocrystalline were prepared by pulsed laser deposition (PLD). PLD has the advantage that the yttrium target acts as a hydrogen source. Comparing the switching behavior to that of MBE-grown, ex-situ loaded films, the PLD-films show a reduced optical and electrical contrast in switching, which is probably due to the formation of Y(OH)3. On the other hand, we found that in the nanocrystalline PLD-films the hysteresis in switching is absent. Moreover, these films have a smoother surface morphology. Both effects are important for the implementation of switchable rare earth hydride films in all-solid-state devices.