Improved Nb SIS devices for heterodyne mixers between 700 GHz and 1.3 THz with NbTiN transmission lines using a normal metal energy relaxation layer
Journal Article
(2013)
Author(s)
M.P. Westig (TU Delft - QN/Fysics of NanoElectronics)
S Selig (External organisation)
K Jacobs (External organisation)
TM Klapwijk (TU Delft - QN/Fysics of NanoElectronics)
CE Honingh (External organisation)
Research Group
QN/Fysics of NanoElectronics
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https://resolver.tudelft.nl/uuid:cdf0bea1-3f51-4900-b541-ceaeb9462247
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Publication Year
2013
Language
English
Research Group
QN/Fysics of NanoElectronics
Issue number
12
Volume number
114
Pages (from-to)
1-13
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