Dual-Polarized Double-Slot Lens Antenna with Low Cross-Polarization at 300GHz in 90nm SiGe-BiCMOS
A. Bechrakis Triantafyllos (TU Delft - Electrical Engineering, Mathematics and Computer Science)
M. Alonso Del Pino (TU Delft - Electrical Engineering, Mathematics and Computer Science)
D. Cavallo (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Klaus Aufinger (Infineon Technologies AG)
M. Spirito (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Nuria Llombart (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
To fulfill the throughput requirement of future wireless systems, polarization diversity can be an important tool to boost the network’s capacity. In this context, dual-polarized antennas with high isolation and low levels of cross-polarization are desirable at THz frequencies. This contribution presents a dual-polarized double-slot antenna operating at 300 GHz and implemented in a 90 nm SiGe BiCMOS process. The antenna’s feeding enables integration with differential circuit topologies, avoiding the need for single-ended to differential baluns and their associated losses. Simulation results show high isolation (<50 dB), low levels of cross-polarization (<-24 dB), good matching (<-15 dB) and reasonable radiation efficiency (>53%) in the 250-320 GHz band which has been proposed for wireless communications. These performance metrics make this antenna a suitable candidate for wireless communication systems at THz frequencies.