Temperature effect on the linearity performance of a CMOS image sensor

Journal article (2018)

Authors

F. Wang Electronic Instrumentation - EEMCS
A.J.P.A.M. Theuwissen Electronic Instrumentation - EEMCS , Harvest Imaging
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This article focuses on the effect of the operating temperature of a CMOS image sensor (CIS) on the pixel performance, especially the linearity behavior. As the temperature increases, the value of the integration capacitor C FD in the floating diffusion (FD) region increases as well. Moreover, the gain of the in-pixel voltage buffer decreases. These two factors lead to a reduced value of the conversion gain. Due to an increase in the nonlinear part of the C FD , the linearity of the CIS at a higher temperature will deteriorate. A digital calibration method proposed previously is used to improve the linearity of the CIS. Measurement results conducted on a prototype image sensor, designed with a 0.18- μ m CIS technology, agree well with an updated analytical model of the CIS and demonstrate an efficient linearity improvement at different temperatures.

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