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Nanopatterning of weak links in superconducting oxide interfaces

Journal Article (2021)
Author(s)

Gyanendra Singh (Chalmers University of Technology)

Edouard Lesne (Kavli institute of nanoscience Delft, TU Delft - QN/Steele Lab)

Dag Winkler (Chalmers University of Technology)

Tord Claeson (Chalmers University of Technology)

Thilo Bauch (Chalmers University of Technology)

Floriana Lombardi (Chalmers University of Technology)

A. Caviglia (TU Delft - QN/Caviglia Lab, Kavli institute of nanoscience Delft)

Alexei Kalaboukhov (Chalmers University of Technology)

Research Group
QN/Steele Lab
Copyright
© 2021 Gyanendra Singh, E.L. Lesne, Dag Winkler, Tord Claeson, Thilo Bauch, Floriana Lombardi, A. Caviglia, Alexei Kalaboukhov
DOI related publication
https://doi.org/10.3390/nano11020398
More Info
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Publication Year
2021
Language
English
Copyright
© 2021 Gyanendra Singh, E.L. Lesne, Dag Winkler, Tord Claeson, Thilo Bauch, Floriana Lombardi, A. Caviglia, Alexei Kalaboukhov
Research Group
QN/Steele Lab
Issue number
2
Volume number
11
Pages (from-to)
1-11
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Abstract

The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30–100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.