A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Conference paper (2012)

Authors

K. Souri Electronic Instrumentation - EEMCS
Y. Chae Electronic Instrumentation - EEMCS
K.A.A. Makinwa Electronic Instrumentation - EEMCS
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2012 K. Souri, Y. Chae, K.A.A. Makinwa
DOI
help_outline
https://doi.org/10.1109/ISSCC.2012.6176978
Calibration Energy efficiency Temperature measurement Temperature sensors Energy resolution Capacitors
More Info
expand_more

Published Date

2012

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.