Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater

Journal article (2019)

Authors

J. Sun Electronic Components, Technology and Materials - EEMCS , Chinese Research Institute
R. Sokolovskij Southern University of Science and Technology, Electronic Components, Technology and Materials - EEMCS
E. Iervolino USound Shenzhen Office
F. Santagata Shenzhen 3NOD Acousticlink Company,
Zewen Liu Tsinghua University
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2019 J. Sun, R. Sokolovskij, E. Iervolino, F. Santagata, Zewen Liu, Pasqualina M Sarro, Kouchi Zhang
DOI
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https://doi.org/10.1109/TED.2019.2936912
Gas sensor AlGaN/GaN Acetone sensor WO₃ High electron mobility transistor (HEMT)
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300°C) increased the sensitivity to up to 25.7% and drain current change I DS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 °C to 300 °C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.