Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique

Journal Article (2021)
Author(s)

Jianwen Sun (TU Delft - Electronic Components, Technology and Materials, Tsinghua University)

Teng Zhan (Chinese Academy of Sciences)

Robert Sokolovskij (Southern University of Science and Technology )

Zewen Liu (Tsinghua University)

P. M. Sarro (TU Delft - Electronic Components, Technology and Materials)

Guo-Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

Research Group
Electronic Components, Technology and Materials
Copyright
© 2021 J. Sun, Teng Zhan, R. Sokolovskij, Zewen Liu, Pasqualina M Sarro, Kouchi Zhang
DOI related publication
https://doi.org/10.1109/JSEN.2021.3082205
More Info
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Publication Year
2021
Language
English
Copyright
© 2021 J. Sun, Teng Zhan, R. Sokolovskij, Zewen Liu, Pasqualina M Sarro, Kouchi Zhang
Research Group
Electronic Components, Technology and Materials
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. @en
Issue number
15
Volume number
21
Pages (from-to)
16475-16483
Reuse Rights

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Abstract

Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance. The sensitivity and current change of the AlGaN/GaN heterostructure to 1-200 ppm NO2/air are increased up to about 20 and 12 times compared to conventional gate device, respectively. The response time is also reduced to only about 25 % of value for conventional device. The sensor has a suspended circular membrane structure and an integrated micro-hotplate for adjusting the optimum working temperature. The sensitivity (response time) increases from 0.75 % (1250 s) to 3.5 % (75 s) toward 40 ppm NO2/air when temperature increase from 60°C to 300°C. The repeatability and cross-sensitivity of the sensor are also demonstrated. These results support the practicability of a high accuracy and fast response gas sensor based on the suspended gate recessed AlGaN/GaN heterostructure with an integrated micro-heater.

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