High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process
Journal Article
(2010)
Authors
N Golshani (TU Delft - Electronic Components, Technology and Materials)
J Derakhshandeh Kheljani (TU Delft - Electronic Components, Technology and Materials)
Ryoichi Ishihara (TU Delft - Electronic Components, Technology and Materials)
C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://doi.org/10.1143/JJAP.49.03CA09
TU Delft Repository resolver:
https://resolver.tudelft.nl/da25cfd7-9e38-4dec-9cf8-e093495e7d1c
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Publication Year
2010
Language
English
Research Group
Electronic Components, Technology and Materials
Bibliographical Note
http://adsabs.harvard.edu/abs/2010JaJAP..49cCA09N@en
Issue number
3
Volume number
49
Pages (from-to)
1-6
DOI:
https://doi.org/10.1143/JJAP.49.03CA09
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