Characterisation of an n-type Si/SiGe modulation doped field-effect transistor
Journal Article
(1997)
Author(s)
VI Kuznetsov (External organisation)
K Werner (TU Delft - QN/Fysics of NanoElectronics)
S Radelaar (TU Delft - OLD Metals Processing, Microstructures and Properties)
JW Metselaar (TU Delft - Electronic Components, Technology and Materials)
Research Group
QN/Fysics of NanoElectronics
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https://resolver.tudelft.nl/uuid:dc2b156b-e9a3-4530-b922-8b574c86e3db
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Publication Year
1997
Research Group
QN/Fysics of NanoElectronics
Volume number
294
Pages (from-to)
263-266
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