Library
Repository Home account_circle Login

Novel Two-dimensional Semiconductor Monolayer SnP2 with Tunable Bandgap

Conference Paper (2019)
Author(s)

Yingying Zhang (Chongqing University)

Luqi Tao (Chongqing University)

Xiandong Li (Chongqing University)

Guoqi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Xianping Chen (Chongqing University)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/EDTM.2019.8731255 Final published version
More Info
expand_more
Publication Year
2019
Language
English
Research Group
Electronic Components, Technology and Materials
Article number
8731255
Pages (from-to)
276-278
ISBN (print)
978-1-5386-6509-1
ISBN (electronic)
978-1-5386-6508-4
Event
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (2019-03-12 - 2019-03-15), Singapore, Singapore
Downloads counter
112

Abstract

The electronic and mechanical properties of monolayer SnP2 are calculated by density functional theory (DFT), showing that monolayer SnP2 is a quasi-direct semiconductor with a moderate bandgap of 1.44 eV. The phonon dispersion, the molecular dynamics and the strain energy reveal that SnP2 is dynamically, thermally and mechanically stable. Further, the bandgap of SnP2 sheet can be effectively adjusted by applying strain. These results open the door for future applications in catalysis and optoelectronics.