Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

Journal article (2019)

Authors

J. Sun Electronic Components, Technology and Materials - EEMCS
Teng Zhan Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting
Zewen Liu Tsinghua University
Junxi Wang Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting
Xiaoyan Yi Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang State Key Laboratory of Solid State Lighting, Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2019 J. Sun, Teng Zhan, Zewen Liu, Junxi Wang, Xiaoyan Yi, Pasqualina M Sarro, Kouchi Zhang
DOI: https://doi.org/10.7567/1882-0786/ab4f5b
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 s by DC heating to 116 s by 50 Hz pulsed heating at the same power (280 mW). With the same pulse duty cycle and a 50 Hz pulsed heating frequency, a reduction of 30%-45% in decay time is measured compared to DC heating.

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