A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM
Sining Pan (TU Delft - Electronic Instrumentation)
Hui Jiang (TU Delft - Electronic Instrumentation)
Kofi A.A. Makinwa (TU Delft - Microelectronics)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μK in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).