A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM
Sining Pan (TU Delft - Electronic Instrumentation)
Hui Jiang (TU Delft - Electronic Instrumentation)
Kofi Kofi (TU Delft - Microelectronics)
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Abstract
This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μK in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).