Reliability Optimization of Gold-Tin Eutectic Die Attach Layer in HEMT Package

Conference paper (2017)

Authors

H. Zhang Harbin University of Science and Technology, Changzhou Institute of Technology Research for Solid State Lighting, Electronic Components, Technology and Materials - EEMCS
J. Fan Hohai University, Changzhou Institute of Technology Research for Solid State Lighting, Beijing Research Center
J. Zhang Electronic Components, Technology and Materials - EEMCS , Changzhou Institute of Technology Research for Solid State Lighting
Cheng Qian Chinese Academy of Sciences, Changzhou Institute of Technology Research for Solid State Lighting
Xuejun Fan Lamar University, Changzhou Institute of Technology Research for Solid State Lighting
Fenglian Sun Harbin University of Science and Technology
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS , Changzhou Institute of Technology Research for Solid State Lighting, Chinese Academy of Sciences
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Fatigue Strain Silicon Microassembly Plastics Substrates Gallium nitride
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Published Date

2017

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper compared the fatigue damage accumulation of the gold-tin eutectic die attach layer in different high electron mobility transistor (HEMT) packages with various types of die attach layers and substrates under thermal cyclic loading. The fatigue damage per cycle used in this study was characterized by the accumulation of plastic work, which was derived by the finite element analysis (FEA). The effects of die attach layer's standoff height and thickness of substrate on fatigue damage accumulation was discussed. The results show that increasing the standoff height of the die attach layer is an effective way to prevent the early crack initiation in gold-tin die attach layer especially for a gallium nitride (GaN) die. It is also indicated that for a GaN die, a thicker die attach layer and a thinner substrate are preferable in order to retain a comparable lifetime with silicon (Si) die and Cu substrate system.

Files

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