Strong doping reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation
K. Dockx (TU Delft - EKL-Users, TU Delft - QN/Kavli Nanolab Delft)
M. D. Barnes (TU Delft - EKL-Users, TU Delft - QN/Kavli Nanolab Delft)
D. J. Wehenkel (TU Delft - QN/Kavli Nanolab Delft, TU Delft - EKL-Users)
R. van Rijn (TU Delft - Old - EWI Sect. ECTM)
H. S.J. van der Zant (TU Delft - QN/van der Zant Lab)
M. Buscema (TU Delft - QN/Kavli Nanolab Delft)
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Abstract
We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3 encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, V cnp , from around +47 V to between −5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.