The performance of sintered nanocopper interconnections for high temperature device

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The performance of sintered nanocopper interconnections for high temperature device

Conference Paper (2018)

Author(s)

Qipeng Liu (Chongqing University)

Xianping Chen (Chongqing University)

Jie Zhu (Beijing COMPO Advanced Technology Co.)

HuanKun Zhang (Beijing COMPO Advanced Technology Co.)

Jiang Song Zhang (Beijing COMPO Advanced Technology Co.)

Jing Guo Zhang (GRIPM Advanced Materials Co., Beijing)

LiGen Wang (General Research Institute for Nonferrous Metals)

Huaiyu Ye (Chongqing University)

Sau Wee Koh (Huawei Technologies Co. Ltd.)

G.O. Zhang (TU Delft - Electronic Components, Technology and Materials)

Research Group

Electronic Components, Technology and Materials

Power device Die attach Nanocopper Paste

DOI related publication

https://doi.org/10.1109/ICEPT.2018.8480591 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:e9b5fe46-3946-4ed3-9415-470f6183dc28

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Publication Year

2018

Language

English

Research Group

Electronic Components, Technology and Materials

Article number

8480591

Pages (from-to)

1476-1478

ISBN (electronic)

978-1-5386-6386-8

Event

ICEPT 2018 (2018-08-08 - 2018-08-11), Shanghai, China

Downloads counter

247

Abstract

IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength.