The performance of sintered nanocopper interconnections for high temperature device

Conference paper (2018)

Authors

Qipeng Liu Chongqing University
X. Chen Chongqing University
Jie Zhu Beijing COMPO Advanced Technology Co.
HuanKun Zhang Beijing COMPO Advanced Technology Co.
Jiang Song Zhang Beijing COMPO Advanced Technology Co.
J. Zhang GRIPM Advanced Materials Co., Beijing
LiGen Wang General Research Institute for Nonferrous Metals
H. Ye Chongqing University
S.W. Koh Huawei Technologies Co. Ltd.
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2018

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength.

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