A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors

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A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors

Conference Paper (2016)

Author(s)

Sten Vollebregt (TU Delft - Electrical Engineering, Mathematics and Computer Science)

B. Alfano (Università degli Studi di Napoli Federico II, ENEA UTTP-MDB)

F. Ricciardella (Italian Institute of Technology)

A.J.M. Giesbers (Philips Innovation Services)

Yelena Grachova (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Henk van Zeijl (TU Delft - Electrical Engineering, Mathematics and Computer Science)

T Polichetti (ENEA UTTP-MDB)

Lina Sarro (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group

Electronic Components, Technology and Materials

Graphene Silicon Fabrication Electrodes Substrates Micromechanical devices Wet etching

DOI related publication

https://doi.org/10.1109/MEMSYS.2016.7421546 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:e9e19132-719d-4445-b861-a56ab8aebe7c

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Publication Year

2016

Language

English

Research Group

Electronic Components, Technology and Materials

Pages (from-to)

17-20

ISBN (electronic)

978-1-5090-1973-1

Event

MEMS 2016 (2016-01-24 - 2016-01-28), Shanghai, China

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Abstract

In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement of the graphene on the underlying SiO2. Moreover, pre-patterning the Mo layer allows customizable graphene geometries to be directly obtained, something that has never been achieved before. This process is extremely suitable for the large-scale fabrication of MEMS/NEMS sensors, especially those benefitting from specific properties of graphene, such as gas sensing.