A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors
S Vollebregt (TU Delft - Electronic Components, Technology and Materials)
B. Alfano (Università degli Studi di Napoli Federico II, ENEA UTTP-MDB)
F. Ricciardella (Italian Institute of Technology)
A.J.M. Giesbers (Philips Innovation Services)
Yelena Hagendoorn (TU Delft - Electronic Components, Technology and Materials)
Henk W. van Zeijl (TU Delft - EKL Processing)
T Polichetti (ENEA UTTP-MDB)
P. M. Sarro (TU Delft - Electronic Components, Technology and Materials)
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Abstract
In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement of the graphene on the underlying SiO2. Moreover, pre-patterning the Mo layer allows customizable graphene geometries to be directly obtained, something that has never been achieved before. This process is extremely suitable for the large-scale fabrication of MEMS/NEMS sensors, especially those benefitting from specific properties of graphene, such as gas sensing.