Hybrid Plasmonics Slot THz Waveguide for Subwavelength Field Confinement and Crosstalk between Two Waveguides

Journal Article (2017)
Author(s)

Jing Xiao (Guilin University of Electronic Technology)

Qi-Qin Wei (Guilin University of Electronic Technology)

Duo Guo Yang (Guilin University of Electronic Technology)

Ping Zhang (Guilin University of Electronic Technology)

Ning He (Guilin University of Electronic Technology)

Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

Xian Ping Chen (Chongqing University)

Research Group
Electronic Components, Technology and Materials
Copyright
© 2017 Jing Xiao, Qi-Qin Wei, Duo Guo Yang, Ping Zhang, Ning He, Kouchi Zhang, Xian Ping Chen
DOI related publication
https://doi.org/10.1109/JSTQE.2017.2649939
More Info
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Publication Year
2017
Language
English
Copyright
© 2017 Jing Xiao, Qi-Qin Wei, Duo Guo Yang, Ping Zhang, Ning He, Kouchi Zhang, Xian Ping Chen
Research Group
Electronic Components, Technology and Materials
Issue number
4
Volume number
23
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Abstract

The slot waveguide has attracted considerable attention because of its ability to confine and guide electromagnetic energy at the subwavelength scale beyond the diffraction limit. We propose a novel terahertz slot waveguide structure to achieve a better tradeoff between propagation length and field confinement capacity, the novel waveguide consisting of a two slot structure. The performances of terahertz waveguides were investigated using the finite-element method. The results demonstrated that the hybrid slot waveguide (HSW) provides significantly enhanced field confinement in low index slot regions: more than five times that of traditional low index slot waveguides (LISWs). An optimized HSW structure was achieved by tuning the tradeoff between mode confinement and propagation length. We also showed that its integration in conventional planar waveguide circuits was greatly improved compared with the LISWs, by comparing their crosstalk. The proposed new HSW structure has great potential to enable THz production of compact integration and could lead to true semiconductor-basedTHz applications with high performance.

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