Synthesis, Crystal Structure, and Luminescence Properties of Y4Si2O7N2
Eu2+ Oxynitride Phosphors
Guozhang Chen (University of Electronic Science and Technology of China)
L.J. Yin (University of Electronic Science and Technology of China, TU Delft - ChemE/Product and Process Engineering)
Jun Tao Dong (University of Electronic Science and Technology of China)
Yan Yu Feng (University of Electronic Science and Technology of China)
Yang Gao (University of Electronic Science and Technology of China)
Weidong He (University of Electronic Science and Technology of China)
Yu Jia (University of Electronic Science and Technology of China)
Xin Xu (University of Science and Technology of China)
H.T.J.M. Hintzen (TU Delft - RST/Fundamental Aspects of Materials and Energy)
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Abstract
Y4Si2O7N2: Eu2+ phosphor has been prepared by a pretreatment method. Reduction in Eu3+ ions into Eu2+ by the use of hydrogen iodide (HI) is verified by X-ray absorption near-edge structure (XANES) and electrode potential analysis. Y4Si2O7N2: Eu2+ phosphor has a broad emission band in the range of 400-500 nm. Furthermore, the effect of Zr doping on the structure and luminescence properties of Y4Si2O7N2: Eu2+ phosphor is researched. It found that the Zr doping leads to an emission blueshift, and improves the luminescence intensity and thermal quenching behavior of Y4Si2O7N2: Eu2+ phosphors. Prospectively, the pretreatment approach could be extended to develop other Eu2+-doped compounds.
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