Synthesis, Crystal Structure, and Luminescence Properties of Y<sub>4</sub>Si<sub>2</sub>O<sub>7</sub>N<sub>2</sub>

Eu<sup>2+</sup> Oxynitride Phosphors

Journal article (2016)

Authors

Guozhang Chen University of Electronic Science and Technology of China
L.J. Yin ChemE/Product and Process Engineering - AS , University of Electronic Science and Technology of China
Jun Tao Dong University of Electronic Science and Technology of China
Yan Yu Feng University of Electronic Science and Technology of China
Yang Gao University of Electronic Science and Technology of China
Weidong He University of Electronic Science and Technology of China
Yu Jia University of Electronic Science and Technology of China
Xin Xu University of Science and Technology of China
H.T.J.M. Hintzen RST/Fundamental Aspects of Materials and Energy - AS
Research Group
ChemE/Product and Process Engineering (AS) (TU Delft)
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Published Date

01-01-2016

Language

English

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Product and Process Engineering

Abstract

Y4Si2O7N2: Eu2+ phosphor has been prepared by a pretreatment method. Reduction in Eu3+ ions into Eu2+ by the use of hydrogen iodide (HI) is verified by X-ray absorption near-edge structure (XANES) and electrode potential analysis. Y4Si2O7N2: Eu2+ phosphor has a broad emission band in the range of 400-500 nm. Furthermore, the effect of Zr doping on the structure and luminescence properties of Y4Si2O7N2: Eu2+ phosphor is researched. It found that the Zr doping leads to an emission blueshift, and improves the luminescence intensity and thermal quenching behavior of Y4Si2O7N2: Eu2+ phosphors. Prospectively, the pretreatment approach could be extended to develop other Eu2+-doped compounds.